| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-92-3 |
| Power Rating | 1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2.5 Ω |
| Polarity | N-CH |
| Power Dissipation | 1 W |
| Threshold Voltage | 2.4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 0.35A |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 65 pF |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
If you need to either amplify or switch between signals in your design, then Microchip Technology"s VN0106N3-G power MOSFET is for you. Its maximum power dissipation is 1000 mW. This device is made with dmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
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