| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-92 |
General Description
●This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
●Features
●►Free from secondary breakdown
●►Low power drive requirement
●►Ease of paralleling
●►Low CISS
●and fast switching speeds
●►Excellent thermal stability
●►Integral source-drain diode
●►High input impedance and high gain
Supertex
6 Pages / 0.51 MByte
Supertex
Trans MOSFET N-CH 60V 0.31A 3Pin TO-92
ETC2
N-Channel Enhancement-Mode Vertical DMOS FETs
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Trans MOSFET N-CH 60V 0.31A 3Pin TO-92
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Trans MOSFET N-CH 60V 0.31A 3Pin TO-92 T/R
Microchip
Trans MOSFET N-CH 60V 0.31A 3Pin TO-92 T/R
Supertex
Trans MOSFET N-CH 60V 0.31A 3Pin TO-92
Microchip
Trans MOSFET N-CH 60V 0.31A 3Pin TO-92 T/R
Microchip
Trans MOSFET N-CH 60V 0.31A 3Pin TO-92 T/R
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MOSFET Small Signal 60V 5Ω
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