| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 10.0 Ω |
| Polarity | N-Channel |
| Power Dissipation | 800 mW |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 190 mA |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
Vishay Siliconix
5 Pages / 0.05 MByte
Vishay Siliconix
N-Channel 200V (D-S) MOSFETs
Vishay Semiconductor
Trans MOSFET N-CH 200V 0.19A 3Pin TO-226AA
Temic
N-Channel MOS Transistors
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