| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-226-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 7.5 Ω |
| Power Dissipation | 1 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Input Capacitance (Ciss) | 60pF @25V(Vds) |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400mW (Ta), 1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bag |
| Size-Length | 5.08 mm |
| Size-Width | 4.06 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
●Supertex N-Channel Enhancement Mode MOSFET Transistors
●The Supertex range of N-channel enhancement-mode (normally-off) DMOS FET transistors from Microchip are suited to a wide range of switching and amplifying applications requiring a low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
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