| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 60 W |
| Number of Outputs | 1 Output |
| Output Voltage | 40 V |
| Output Current | 6 A |
| Supply Current | 0.1 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 40.0 V |
| Continuous Drain Current (Ids) | 6.00 A |
| Output Current (Max) | 6 A |
| Output Current (Min) | 6 A |
| Number of Inputs | 1 Input |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Height | 2.4 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The VND7NV04-E is a 55V Fully Auto Protected Power MOSFET made using VIPower™ M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
● Linear current limitation
● Thermal shutdown
● Short-circuit protection
● Integrated clamp
● Low current drawn from input pin
● Diagnostic feedback through input pin
● ESD protection
● Direct access to the gate of the power MOSFET (analogue driving)
● Compatible with standard power MOSFET
●ESD sensitive device, take proper precaution while handling the device.
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