TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Outputs | 1 Output |
Output Current | 9 A |
Supply Current | 0.1 mA |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.06 Ω |
Polarity | N-Channel |
Power Dissipation | 60 W |
Threshold Voltage | 500 mV |
Drain to Source Voltage (Vds) | 45 V |
Breakdown Voltage (Drain to Source) | 40.0 V |
Continuous Drain Current (Ids) | 6.00 A |
Output Current (Max) | 6 A |
Output Current (Min) | 6 A |
Number of Inputs | 1 Input |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 60000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.6 mm |
Size-Width | 6.2 mm |
Size-Height | 2.4 mm |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
The VND7NV04TR-E is a 45V Fully Auto Protected Power MOSFET made using VIPower™ M0 technology intended for replacement of standard power MOSFETS in DC to 50KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
● Linear current limitation
● Thermal shutdown
● Short-circuit protection
● Integrated clamp
● Low current drawn from input pin
● Diagnostic feedback through input pin
● ESD protection
● Direct access to the gate of the power MOSFET (analogue driving)
● Compatible with standard power MOSFET
●ESD sensitive device, take proper precaution while handling the device.
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