TYPE | DESCRIPTION |
---|
Case/Package | TO-220-3 |
Number of Outputs | 1 Output |
Output Current | 6 A |
Drain to Source Resistance (on) (Rds) | 300 mΩ |
Power Dissipation | 27 W |
Breakdown Voltage (Drain to Source) | 60.0 V |
Continuous Drain Current (Ids) | 10.0 A |
Output Current (Max) | 6 A |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
DESCRIPTION
●The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
●■ LINEAR CURRENT LIMITATION
●■ THERMAL SHUT DOWN
●■ SHORT CIRCUIT PROTECTION
●■ INTEGRATED CLAMP
●■ LOW CURRENT DRAWN FROM INPUT PIN
●■ LOGIC LEVEL INPUT THRESHOLD
●■ ESD PROTECTION
●■ SCHMITT TRIGGER ON INPUT
●■ HIGH NOISE IMMUNITY
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