| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 35.0 A |
| Case/Package | TO-220-3 |
| Number of Outputs | 1 Output |
| Drain to Source Resistance (on) (Rds) | 28.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 35.0 A |
| Rise Time | 350 ns |
| Output Current (Max) | 25 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
DESCRIPTION
●The VNP35N07 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linearcurrent limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
●■ LINEAR CURRENT LIMITATION
●■ THERMAL SHUT DOWN
●■ SHORT CIRCUIT PROTECTION
●■ INTEGRATED CLAMP
●■ LOW CURRENT DRAWN FROM INPUT PIN
●■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
●■ ESD PROTECTION
●■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
●■ COMPATIBLE WITH STANDARD POWER MOSFET
●■ STANDARD TO-220 PACKAGE
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