| TYPE | DESCRIPTION |
|---|
| Number of Pins | 12 Pin |
| Case/Package | PowerSO-10 |
| Number of Outputs | 1 Output |
| Drain to Source Resistance (on) (Rds) | 50.0 mΩ |
| Power Dissipation | 83.0 W |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Continuous Drain Current (Ids) | 20.0 A |
| Output Current (Max) | 14 A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
DESCRIPTION
●The VNP20N07FI, VNB20N07 and VNV20N07 are monolithic devices made using STMicroelectronics VlPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the voltage at the input pin.
●■ LINEAR CURRENT LIMITATION
●■ THERMAL SHUT DOWN
●■ SHORT CIRCUIT PROTECTION
●■ INTEGRATED CLAMP
●■ LOW CURRENT DRAWN FROM INPUT PIN
●■ DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
●■ ESD PROTECTION
●■ DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
●■ COMPATIBLE WITH STANDARD POWER MOSFET
ST Microelectronics
13 Pages / 0.39 MByte
ST Microelectronics
14 Pages / 0.39 MByte
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