| TYPE | DESCRIPTION |
|---|
| Number of Pins | 12 Pin |
| Case/Package | MTP |
| Power Dissipation | 463000 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 463000 mW |
| TYPE | DESCRIPTION |
|---|
| Size-Length | 63.5 mm |
| Size-Width | 33 mm |
| Size-Height | 16 mm |
The VS-40MT120UHAPBF infineon IGBT module from Vishay will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 463000 mW. It is made in a dual configuration. This IGBT driver board has a minimum operating temperature of -40 °C and a maximum of 150 °C.
VISHAY
11 Pages / 0.27 MByte
Vishay Semiconductor
VISHAY VS-40MT120UHAPBF IGBT Array & Module Transistor, NPN, 80A, 5.35V, 463W, 1.2kV, MTP
Vishay Semiconductor
VISHAY VS-40MT120UHTAPBF IGBT Array & Module Transistor, NPN, 80A, 5.35V, 463W, 1.2kV, MTP
VISHAY
Trans IGBT Module N-CH 1200V 80A 463000mW 12Pin MTP
VISHAY
Trans IGBT Module N-CH 1200V 80A 463000mW 12Pin MTP
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