| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | T-1 |
| Rise/Fall Time | 0.01 µs |
| Number of Positions | 2 Position |
| Forward Voltage | 1.65 V |
| Wavelength | 850 nm |
| Viewing Angle | 6° |
| Peak Wavelength | 850 nm |
| Power Dissipation | 190 W |
| Rise Time | 10 ns |
| Test Current | 100 mA |
| Forward Current | 100 mA |
| Maximum Forward Voltage (Max) | 1.9 V |
| Forward Current (Max) | 100 mA |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 190 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Height | 8.6 mm |
The VSLY5850 is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensity, high optical power and high speed and moulded in a clear. It is suitable for use in infrared radiation source for operation with CMOS cameras, high speed IR data transmission, smoke-automatic fire detectors and IR flash.
● Leads with stand-off
● High reliability
● High radiant power
● High radiant intensity
● ±3° Narrow angle of half intensity
VISHAY
5 Pages / 0.1 MByte
VISHAY
5 Pages / 0.1 MByte
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