TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 2 Pin |
Case/Package (SI) | 2012 |
Case/Package | 0805 |
Rise/Fall Time | 0.01 µs |
Number of Positions | 2 Position |
Forward Voltage | 1.65 V |
Wavelength | 850 nm |
Viewing Angle | 120° |
Peak Wavelength | 850 nm |
Power Dissipation | 190 mW |
Rise Time | 10 ns |
Test Current | 100 mA |
Forward Current | 100 mA |
Forward Current (Max) | 100 mA |
Fall Time | 10 ns |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 190 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Operating Temperature | -40℃ ~ 85℃ (TA) |
The VSMY1850X01 is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with high radiant intensity, high optical power and high speed, moulded in clear. It is suitable for high pulse current operation and floor life of 168h, MSL 3, according to J-STD-020.
● AEC-Q101 qualified
● High reliability
● High radiant power
● High radiant intensity
● ±60° Angle of half sensitivity
Vishay Semiconductor
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Vishay Semiconductor
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