| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 2 Pin |
| Case/Package | SMD-2 |
| Power Rating | 2.5 W |
| Rise/Fall Time | 0.0165 µs |
| Forward Voltage | 2 V |
| Wavelength | 850 nm |
| Viewing Angle | 120° |
| Peak Wavelength | 850 nm |
| Power Dissipation | 2500 mW |
| Rise Time | 15 ns |
| Test Current | 1000 mA |
| Forward Current | 1 A |
| Maximum Forward Voltage (Max) | 2.5 V |
| Forward Current (Max) | 1000 mA |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.4 mm |
| Operating Temperature | -40℃ ~ 100℃ (TA) |
The VSMY7850X01-GS08 is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 1 year, MSL 2, according to J-STD-020.
● High reliability
● High radiant power
● High radiant intensity
● Low forward voltage
● AEC-Q101 qualified
● ±60° Angle of half intensity
Vishay Semiconductor
7 Pages / 0.16 MByte
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High Power Infrared Emitting Diode
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IR transmitter; 850nm; transparent; P opt:800mW; 120°; SMD; P:2.5W
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Infrared LED, 3.3mm, 1Element, INFRARED LED, 850nm, ROHS COMPLIANT PACKAGE-2
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