| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SMD-3 |
| Rise/Fall Time | 0.015 µs |
| Number of Positions | 3 Position |
| Forward Voltage | 1.8 V |
| Wavelength | 850 nm |
| Viewing Angle | 45° |
| Peak Wavelength | 850 nm |
| Power Dissipation | 2300 mW |
| Rise Time | 15 ns |
| Test Current | 1000 mA |
| Forward Current | 1 A |
| Maximum Forward Voltage (Max) | 2.3 V |
| Forward Current (Max) | 1000 mA |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 95 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 2.24 mm |
| Operating Temperature | -40℃ ~ 95℃ (TA) |
The VSMY98545 is a 850nm Infrared Emitting Diode based on surface emitter technology with high radiant power and high speed. A 42mil chip provides outstanding low forward voltage and allows DC operation of the device up to 1A. It has the floor life of 168h, MSL 3, according to J-STD-020.
● High reliability
● High radiant power
● High radiant intensity
● Low forward voltage
● Lead (Pb)-free reflow soldering
● ±45° Angle of half intensity
Vishay Semiconductor
7 Pages / 0.25 MByte
Vishay Semiconductor
7 Pages / 0.25 MByte
Vishay Semiconductor
2 Pages / 0.13 MByte
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