W29EE011P-90 Datasheet PDF - Winbond Electronics

GENERAL DESCRIPTION

●The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K ×8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPPis not required. The unique cell architecture of the W29EE011 results in fast program/erase operations with extremely low current consumption (compared toother comparable 5-volt flash memory products). 

●FEATURES

●Single 5-volt program and erase operations  

●Fast page-write operations 

●  −128 bytes per page

●  −Page program cycle: 10 mS (max.)

●  −Effective byte-program cycle time: 39 µS

●  −Optional software-protected data write

●Fast chip-erase operation: 50 mS

●Read access time: 90/150 nS

●Page program/erase cycles: 1K/10K

●Ten-year data retention

●Software and hardware data protection

●Low power consumption

●  −Active current: 25 mA (typ.)

●  −Standby current: 20 µA (typ.)

●Automatic program timing with internal VPPgeneration

●End of program detection

●  −Toggle bit

●  −Data polling

●Latched address and data

●TTL compatible I/O

●JEDEC standard byte-wide pinouts

●Available packages: 32-pin 600 mil DIP, 32-pin TSOP (8 x 20 mm), 32-pin STSOP 

●(8 x 14 mm), 32-pin PLCC, and Lead-free 32-pin PLCC