| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 500 mA |
| Case/Package | TO-92-3 |
| Polarity | NPN |
| Power Dissipation | 680 mW |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 25 @10mA, 10V |
| hFE Max | 25 @10mA, 10V |
| Input Power (Max) | 680 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 680 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 4.77 mm |
| Size-Width | 2.41 mm |
| Size-Height | 4.01 mm |
| Operating Temperature | -55℃ ~ 175℃ |
NPN SILICON PLANAR AVALANCHE TRANSISTOR
●FEATURES
● Specifically designed for Avalanche mode operation
● 60A Peak Avalanche Current (Pulse width=20ns)
● Low inductance package
●APPLICATIONS
● Laser LED drivers
● Fast edge generation
● High speed pulse generators
● Suitable for single, series and parallel operation
Diodes
2 Pages / 0.05 MByte
Diodes
293 Pages / 0.91 MByte
Diodes
3 Pages / 0.07 MByte
Diodes
1 Pages / 0.16 MByte
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