| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -25.0 V |
| Current Rating | -1.00 A |
| Case/Package | TO-92-3 |
| Polarity | PNP |
| Power Dissipation | 1 W |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Continuous Collector Current | 1A |
| hFE Min | 100 @500mA, 2V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 4.95 mm |
| Size-Width | 2.41 mm |
| Size-Height | 4.95 mm |
| Operating Temperature | -55℃ ~ 200℃ |
Implement this versatile PNP ZTX549 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 200 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
Diodes
3 Pages / 0.05 MByte
Diodes
293 Pages / 0.91 MByte
Diodes
1 Pages / 0.16 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
