TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 150 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -45.0 V |
Current Rating | -1.00 A |
Case/Package | E-Line-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 1 W |
Gain Bandwidth Product | 150 MHz |
Breakdown Voltage (Collector to Emitter) | 45 V |
Continuous Collector Current | 1A |
hFE Min | 100 @150mA, 10V |
Input Power (Max) | 1 W |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Size-Length | 4.77 mm |
Size-Width | 2.41 mm |
Size-Height | 4.01 mm |
Operating Temperature | -55℃ ~ 200℃ |
Implement this versatile PNP ZTX550 GP BJT from Diodes Zetex into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C.
Diodes
2 Pages / 0.05 MByte
Diodes
199 Pages / 0.86 MByte
Diodes
1 Pages / 0.01 MByte
Diodes
1 Pages / 0.16 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.