| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 160 V |
| Current Rating | 1.00 A |
| Case/Package | E-Line-3 |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| Continuous Collector Current | 1A |
| hFE Min | 2000 @500mA, 10V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Gain Bandwidth | 250 MHz |
| Power Dissipation (Max) | 1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
Diodes Zetex"s NPN ZTX601 Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.9@10mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@50mA@10 V|2000@500mA@10V|1000@1A@10V. It has a maximum collector emitter saturation voltage of 1.1@5mA@0.5A|1.2@10mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 200 °C.
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