| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -300 V |
| Current Rating | -500 mA |
| Case/Package | E-Line-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 300 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 50 @100mA, 5V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 200℃ |
The PNP ZTX757 general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.
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