| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 25.0 V |
| Current Rating | 5.00 A |
| Case/Package | TO-92-3 |
| Polarity | NPN |
| Power Dissipation | 1.2 W |
| Breakdown Voltage (Collector to Emitter) | 25 V |
| Continuous Collector Current | 5A |
| hFE Min | 300 @1A, 1V |
| hFE Max | 300 @10mA, 1V |
| Input Power (Max) | 1.2 W |
| DC Current Gain (hFE) | 450 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 4.77 mm |
| Size-Width | 2.41 mm |
| Size-Height | 4.01 mm |
| Operating Temperature | -55℃ ~ 200℃ |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN ZTX869 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 6 V.
Diodes
3 Pages / 0.06 MByte
Diodes
293 Pages / 0.91 MByte
Diodes
1 Pages / 0.01 MByte
Diodes
1 Pages / 0.15 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
