| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 200 mA |
| Case/Package | TO-92-3 |
| Power Rating | 0.625 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 10 Ω |
| Polarity | N-Channel |
| Power Dissipation | 625 mW |
| Threshold Voltage | 2.4 V |
| Input Capacitance | 40.0 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 200 mA |
| Rise Time | 7.00 ns |
| Input Capacitance (Ciss) | 40pF @25V(Vds) |
| Input Power (Max) | 625 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
The ZVN3310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 10R resistance and 625mW power dissipation.
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