TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Voltage Rating (DC) | 60.0 V |
Current Rating | 1.10 A |
Case/Package | E-Line-3 |
Drain to Source Resistance (on) (Rds) | 450 mΩ |
Polarity | N-Channel |
Power Dissipation | 850mW (Ta) |
Input Capacitance | 350 pF |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 1.10 A |
Rise Time | 25.0 ns |
Input Capacitance (Ciss) | 350pF @25V(Vds) |
Power Dissipation (Max) | 850mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape, Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Vishay Semiconductor
4 Pages / 0.18 MByte
Vishay Semiconductor
2 Pages / 0.02 MByte
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