TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 900 mA |
Case/Package | TO-92-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.65 Ω |
Polarity | N-Channel |
Power Dissipation | 850 mW |
Threshold Voltage | 3 V |
Input Capacitance | 350 pF |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 900 mA |
Rise Time | 25 ns |
Input Capacitance (Ciss) | 350pF @25V(Vds) |
Input Power (Max) | 850 mW |
Fall Time | 16 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 850 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 4.77 mm |
Size-Width | 2.41 mm |
Size-Height | 4.01 mm |
Operating Temperature | -55℃ ~ 150℃ |
The ZVN4310A is a 100V E-Line N-channel Enhancement Mode Vertical DMOS FET with 0.5R resistance and 850mW power dissipation.
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