| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -280 mA |
| Case/Package | TO-92-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 4 Ω |
| Polarity | P-Channel |
| Power Dissipation | 700 mW |
| Threshold Voltage | 3.5 V |
| Input Capacitance | 100 pF |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 320 mA |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 100pF @18V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 700 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The ZVP2106A is a P-channel enhancement mode MOSFET Transistor with -4A pulsed drain current.
● ±20V Gate Source Voltage
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