TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Voltage Rating (DC) | -100 V |
Current Rating | -350 mA |
Case/Package | TO-261-4 |
Drain to Source Resistance (on) (Rds) | 8.00 Ω |
Polarity | P-Channel |
Power Dissipation | 2 W |
Input Capacitance | 100 pF |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 310 mA |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 100pF @25V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
This ZVP2110GTA power MOSFET from Diodes Zetex can be used for amplification in your circuit. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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