| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -160 mA |
| Case/Package | TO-92-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 14 Ω |
| Polarity | P-Channel |
| Power Dissipation | 625 mW |
| Input Capacitance | 50.0 pF |
| Drain to Source Voltage (Vds) | 60.0 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 160 mA |
| Rise Time | 8 ns |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 4.77 mm |
| Size-Width | 2.41 mm |
| Size-Height | 4.01 mm |
Diodes
3 Pages / 0.07 MByte
Zetex
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
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