| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Supply Voltage (DC) | 0.00V(min), 20.0V(max) |
| Case/Package | SOT-23-6 |
| Rise/Fall Time | 8.3ns, 10.8ns |
| Number of Outputs | 1 Output |
| Output Current | 9.00 A |
| Number of Positions | 6 Position |
| Power Dissipation | 1.1 W |
| Rise Time | 105 ns |
| Output Current (Max) | 9 A |
| Fall Time | 115 ns |
| Fall Time (Max) | 115 ns |
| Fall Time (Max) | 105 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1100 mW |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 0 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -55℃ ~ 150℃ |
The ZXGD3002E6TA is a Non-inverting Single MOSFET Gate Driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 20V. With typical propagation delay times down to 2ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications. The ZXGD3002E6 is inherently rugged to latch-up and shoot-through and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs enables reduced parasitic inductance and independent control of rise and fall slew rates.
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