| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.22 Ω |
| Polarity | N-Channel |
| Power Dissipation | 806 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 1.40 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The ZXM61N03F is a N-channel enhancement mode MOSFET uses diodes proprietary, high density, uses advanced trench technology. Designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. Suitable for low voltage and current applications.
● Low on resistance
● Low gate threshold voltage
● Fast switching speed
● AEC-Q101 Qualified
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