TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 1.80 A |
Case/Package | SOT-223-8 |
Output Current | ≤2.20 A |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 1.5 Ω |
Polarity | N-Channel, P-Channel |
Power Dissipation | 1.7 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 1.80 A |
Input Capacitance (Ciss) | 166pF @40V(Vds) |
Input Power (Max) | 1.3 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1700 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.6 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The ZXMHC6A07T8TA is a 60V Enhancement Mode H-bridge MOSFET that utilizes a unique structure and combines the benefits of low on-resistance with fast switching speed. This makes the MOSFET ideal for high efficiency, low voltage and power management applications.
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Trans MOSFET N/P-CH 60V 1.8A/1.5A 8Pin SM T/R
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COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
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MOSFET H-BRIDGE N/P-CH 60V SM8
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