| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.6 Ω |
| Power Dissipation | 3.9 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Operating Temperature (Max) | 150 ℃ |
The ZXMN10A11G is a N-channel enhancement-mode MOSFET with moulded plastic case and solderable matte tin-finish annealed over copper lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
● Low ON-resistance
● Fast switching speed
● Low gate drive
● Low input capacitance
● Halogen-free, Green device
● Qualified to AEC-Q101 standards for high reliability
● Moisture sensitivity level 1 as per J-STD-020
● UL94V-0 Flammability rating
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