| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.90 A |
| Case/Package | SOT-23-6 |
| Drain to Source Resistance (on) (Rds) | 230 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.7 W |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 1.90 A |
| Rise Time | 2.1 ns |
| Input Capacitance (Ciss) | 497pF @50V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This ZXMN10B08E6TA power MOSFET from Diodes Zetex can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1700 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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