TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 50 mΩ |
Polarity | N-CH |
Power Dissipation | 3.9 W |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 6.7A |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 1063pF @30V(Vds) |
Input Power (Max) | 2 W |
Fall Time | 10.6 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 2W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.7 mm |
Size-Width | 3.7 mm |
Size-Height | 1.65 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common source amplifier using this ZXMN6A25GTA power MOSFET from Diodes Zetex. Its maximum power dissipation is 3900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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