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47N60S5Datasheet PDF
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2003-07-02
Page 1
SPW47N60S5
Final data
Cool MOS™ Power Transistor
V
DS
600 V
R
DS(on)
0.07 Ω
I
D
47 A
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on)
in TO 247
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO247
Type Package Ordering Code
SPW47N60S5 P-TO247 Q67040-S4240
Marking
47N60S5
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
47
30
A
Pulsed drain current, t
p
limited by T
j
ma
x
I
D
p
uls
94
Avalanche energy, single pulse
I
D
= 10 A, V
DD
= 50 V
E
AS
1800 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
1
)
I
D
= 20 A, V
DD
= 50 V
E
AR
1
Avalanche current, repetitive t
AR
limited by T
j
ma
x
I
AR
20 A
Gate source voltage V
GS
±20
V
Gate source voltage AC (f >1Hz)
V
GS
±30
Power dissipation, T
C
= 25°C
P
tot
415 W
Operating and storage temperature T
j
,
T
st
g
-55... +150
°C
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