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AT28C64B-15SCDatasheet PDF
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1
Features
• Fast Read Access Time – 150 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
• Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum (Standard)
2 ms Maximum (Option)
– 1 to 64-byte Page Write Operation
• Low Power Dissipation
– 40 mA Active Current
–100 µA CMOS Standby Current
• Hardware and Software Data Protection
• DATA Polling and Toggle Bit for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
• Single 5 V ±10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
Rev. 0270I–PEEPR–08/03
Pin Configurations
Pin Name Function
A0 - A12 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
NC
DC
VCC
WE
NC
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