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FD800R33KL2CKB5NOSA1
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FD800R33KL2CKB5NOSA1 Datasheet - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:Module
Description:3300V IHV 190mm chopper IGBT Module with IGBT2 and and 10.2kV isolation - The best solution for your traction and ind...
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FD800R33KL2CKB5NOSA1Datasheet PDF
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1
TechnischeInformation/TechnicalInformation
FD800R33KL2C-K_B5
IGBT-Module
IGBT-modules
preparedby:KHH
approvedby:TS
dateofpublication:2013-10-03
revision:2.1
VorläufigeDaten
PreliminaryDataIGBT,Brems-Chopper/IGBT,Brake-Chopper
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C
T
vj
= -25°C
V
CES
3300
3300
V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
800
1500
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
1600 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 150 P
tot
9,80 kW
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 800 A, V
GE
= 15 V
I
C
= 800 A, V
GE
= 15 V
V
CE sat
3,00
3,70
3,65
4,45
V
V
T
vj
= 25°C
T
vj
= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 80,0 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
4,2 5,1 6,0 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V, V
CE
= 1800V Q
G
15,0 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
0,75 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
97,0 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
5,40 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 3300 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 6,8 Ω, C
GE
= 220 nF
t
d on
1,00
1,00
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Gon
= 6,8 Ω, C
GE
= 220 nF
t
r
0,40
0,40
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 6,8 Ω, C
GE
= 220 nF
t
d off
3,70
3,90
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 800 A, V
CE
= 1800 V
V
GE
= ±15 V
R
Goff
= 6,8 Ω, C
GE
= 220 nF
t
f
0,25
0,35
µs
µs
T
vj
= 25°C
T
vj
= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 800 A, V
CE
= 1800 V, L
S
= 60 nH
V
GE
= ±15 V, di/dt = 4200 A/µs
R
Gon
= 3,0 Ω, C
GE
= 220 nF
E
on
1700
2250
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 800 A, V
CE
= 1800 V, L
S
= 60 nH
V
GE
= ±15 V
R
Goff
= 6,8 Ω, C
GE
= 220 nF
E
off
900
1250
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 2500 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
3500
A
T
vj
= 125°C
t
P
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
13,0 K/kW
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
12,0 K/kW
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C

FD800R33KL2CKB5NOSA1 Documents

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3300V IHV 190mm chopper IGBT Module with IGBT2 and and 10.2kV isolation - The best solution for your traction and ind...
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