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FF150R12KT3G
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FF150R12KT3G Datasheet - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:AG-62MM-1
Description:Trans IGBT Module N-CH 1200V 225A 780000mW 7Pin 62MM Tray
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FF150R12KT3GDatasheet PDF
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62mmC-SerienModulmitschnellemTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyDiode
62mmC-seriesmodulewiththefasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode
1
TechnischeInformation/TechnicalInformation
FF150R12KT3G
IGBT-Module
IGBT-modules
preparedby:MK
approvedby:WR
dateofpublication:2013-10-03
revision:3.0
IGBT,Wechselrichter/IGBT,Inverter
HöchstzulässigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
Collector-emittervoltage
T
vj
= 25°C V
CES
1200 V
Kollektor-Dauergleichstrom
ContinuousDCcollectorcurrent
T
C
= 80°C, T
vj max
= 150°C
T
C
= 25°C, T
vj max
= 150°C
I
C nom
I
C
150
225
A
A
PeriodischerKollektor-Spitzenstrom
Repetitivepeakcollectorcurrent
t
P
= 1 ms I
CRM
300 A
Gesamt-Verlustleistung
Totalpowerdissipation
T
C
= 25°C, T
vj max
= 150 P
tot
780 W
Gate-Emitter-Spitzenspannung
Gate-emitterpeakvoltage
V
GES
+/-20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emittersaturationvoltage
I
C
= 150 A, V
GE
= 15 V
I
C
= 150 A, V
GE
= 15 V
V
CE sat
1,70
1,90
2,15
V
V
T
vj
= 25°C
T
vj
= 125°C
Gate-Schwellenspannung
Gatethresholdvoltage
I
C
= 6,00 mA, V
CE
= V
GE
, T
vj
= 25°C V
GEth
5,0 5,8 6,5 V
Gateladung
Gatecharge
V
GE
= -15 V ... +15 V Q
G
1,40 µC
InternerGatewiderstand
Internalgateresistor
T
vj
= 25°C R
Gint
5,0 Ω
Eingangskapazität
Inputcapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
ies
11,0 nF
Rückwirkungskapazität
Reversetransfercapacitance
f = 1 MHz, T
vj
= 25°C, V
CE
= 25 V, V
GE
= 0 V C
res
0,50 nF
Kollektor-Emitter-Reststrom
Collector-emittercut-offcurrent
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 25°C I
CES
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterleakagecurrent
V
CE
= 0 V, V
GE
= 20 V, T
vj
= 25°C I
GES
400 nA
Einschaltverzögerungszeit,induktiveLast
Turn-ondelaytime,inductiveload
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 4,7 Ω
t
d on
0,16
0,17
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Anstiegszeit,induktiveLast
Risetime,inductiveload
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Gon
= 4,7 Ω
t
r
0,04
0,045
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Abschaltverzögerungszeit,induktiveLast
Turn-offdelaytime,inductiveload
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 4,7 Ω
t
d off
0,45
0,52
µs
µs
T
vj
= 25°C
T
vj
= 125°C
Fallzeit,induktiveLast
Falltime,inductiveload
I
C
= 150 A, V
CE
= 600 V
V
GE
= ±15 V
R
Goff
= 4,7 Ω
t
f
0,10
0,16
µs
µs
T
vj
= 25°C
T
vj
= 125°C
EinschaltverlustenergieproPuls
Turn-onenergylossperpulse
I
C
= 150 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, di/dt = 3000 A/µs
R
Gon
= 4,7 Ω
E
on
7,50
11,0
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
AbschaltverlustenergieproPuls
Turn-offenergylossperpulse
I
C
= 150 A, V
CE
= 600 V, L
S
= 30 nH
V
GE
= ±15 V, du/dt = 4500 V/µs
R
Goff
= 4,7 Ω
E
off
14,5
22,0
mJ
mJ
T
vj
= 25°C
T
vj
= 125°C
Kurzschlußverhalten
SCdata
V
GE
≤ 15 V, V
CC
= 900 V
V
CEmax
= V
CES
-L
sCE
·di/dt
I
SC
600
A
T
vj
= 125°C
t
P
≤ 10 µs,
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proIGBT/perIGBT R
thJC
0,16 K/W
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proIGBT/perIGBT
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
R
thCH
0,03 K/W
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions
T
vj op
-40 125 °C

FF150R12KT3G Documents

FF150R12KT3G Datasheet
Infineon
8 Pages / 0.41 MByte
FF150R12KT3G User Reference Manual Guide
Infineon
36 Pages / 3.45 MByte
FF150R12KT3G Other Datasheet PDF
Infineon
73 Pages / 2.93 MByte
FF150R12KT3G Application Note
Infineon
40 Pages / 6.73 MByte

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