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IRF540Datasheet PDF
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IRF540NS
IRF540NL
HEXFET
®
Power MOSFET
07/01/05
www.irf.com 1
V
DSS
= 100V
R
DS(on)
= 44mΩ
I
D
= 33A
S
D
G
Advanced HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Absolute Maximum Ratings
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 33
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 23 A
I
DM
Pulsed Drain Current 110
P
D
@T
C
= 25°C Power Dissipation 130 W
Linear Derating Factor 0.87 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 13 mJ
dv/dt Peak Diode Recovery dv/dt 7.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
D
2
Pak
IRF540NS
TO-262
IRF540NL
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.15
R
θJA
Junction-to-Ambient (PCB mount)** ––– 40
Thermal Resistance
°C/W
PD - 91342B
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