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IRFP4668 Datasheet - Infineon
| Manufacturer: | Infineon |
| Case Package: | TO-247 |
| Description: | 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package |
| Pictures: |
IRFP4668Datasheet PDF
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9/8/08
www.irf.com 1
HEXFET
®
Power MOSFET
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
S
D
G
GDS
Gate Drain Source
TO-247AC
S
D
G
D
IRFP4668PbF
V
DSS
200V
R
DS(on)
typ.
8.0m
:
max
.
9.7m
:
I
D
130A
Absolute Maximum Ratings
Symbol Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
T
J
Operating Junction and
°C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
f
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case
j –––
0.29
R
θ
CS
Case-to-Sink, Flat Greased Surface
0.24 ––– °C/W
R
θ
JA
Junction-to-Ambient
ij ––– 40
300
Max.
130
92
520
760
See Fig. 14, 15, 22a, 22b,
520
57
-55 to + 175
± 30
3.5
10lb
x
in (1.1N
x
m)
PD -97140
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