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IXFT320N10T2Datasheet PDF
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© 2012 IXYS CORPORATION, All Rights Reserved
DS100237A(5/12)
IXFH320N10T2
IXFT320N10T2
TrenchT2
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C 100 V
V
DGR
T
J
= 25°C to 175°C, R
GS
= 1MΩ 100 V
V
GSS
Continuous ± 20 V
V
GSM
Transient ± 30 V
I
D25
T
C
= 25°C (Chip Capability) 320 A
I
LRMS
Lead Current Limit, RMS 160 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
800 A
I
A
T
C
= 25°C 160 A
E
AS
T
C
= 25°C 1.5 J
dv/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 175°C 15 V/ns
P
D
T
C
= 25°C 1000 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
1.6mm (0.062in.) from Case for 10s 300 °C
T
sold
Plastic Body for 10 seconds 260 °C
M
d
Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= 1mA 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250μA 2.0 4.0 V
I
GSS
V
GS
= ± 20V, V
DS
= 0V ±200 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V 25 μA
T
J
= 150°C 1.75 mA
R
DS(on)
V
GS
= 10V, I
D
= 100A, Notes 1 & 2 3.5 mΩ
V
DSS
= 100V
I
D25
= 320A
R
DS(on)
≤≤
≤≤
≤
3.5m
ΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
TO-268 (IXFT)
G
S
D (Tab)
S
G
D (Tab)
D
Features
z
International Standard Packages
z
High Current Handling Capability
z
Fast Intrinsic Diode
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Low R
DS(on)
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
Applications
z
Synchronous Recification
z
DC-DC Converters
z
Battery Chargers
z
Switch-Mode and Resonant-Mode
Power Supplies
z
DC Choppers
z
AC Motor Drives
z
Uninterruptible Power Supplies
z
High Speed Power Switching
Applications
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