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IXXK100N60C3H1Datasheet PDF
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© 2013 IXYS CORPORATION, All Rights Reserved
IXYN100N120B3H1
V
CES
= 1200V
I
C110
= 76A
V
CE(sat)
≤ ≤
≤ ≤
≤
2.6V
t
fi(typ)
= 240ns
DS100520A(03/13)
Features
z
Optimized for 5-30kHZ Switching
z
Square RBSOA
z
2500V~ Isolation Voltage
z
Anti-Parallel Ultra Fast Diode
z
Positive Thermal Coefficient of
Vce(sat)
z
Avalanche Rated
z
High Current Handling Capability
z
International Standard Package
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 1200 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 50 μA
T
J
= 125°C 2.75 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 100A, V
GE
= 15V, Note 1 2.20 2.60 V
T
J
= 150°C 2.76 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C (Chip Capability) 165 A
I
C110
T
C
= 110°C 76 A
I
F110
T
C
= 110°C 42 A
I
CM
T
C
= 25°C, 1ms 480 A
I
A
T
C
= 25°C 50 A
E
AS
T
C
= 25°C 1.2 J
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 1Ω I
CM
= 200 A
(RBSOA) Clamped Inductive Load @V
CE
≤ V
CES
P
C
T
C
= 25°C 690 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60Hz t = 1min 2500 V~
I
ISOL
≤ 1mA t = 1s 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
1200V XPT
TM
IGBT
GenX3
TM
w/ Diode
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
G
E c
E c
C
E153432
E
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
Preliminary Technical Information
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