Part Datasheet Search > IGBTs > Toshiba > MG600Q1US59A Datasheet PDF > MG600Q1US59A Datasheet Pages 1/8
MG600Q1US59ADatasheet PDF
Page:
of 8 Go
If the format of the manual is confusing, please download and read the original PDF file.
MG600Q1US61
2002-10-04
1
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
High Power Switching Applications
Motor Control Applications
· High input impedance
· High speed: t
f
= 0.3 µs (max)
Inductive load
· Low saturation voltage: V
CE (sat)
= 2.6 V (max)
· The electrodes are isolated from case.
· Enhancement-mode
Equivalent Circuit
Maximum Ratings
(Tc =
==
= 25°C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V
CES
1200 V
Gate-emitter voltage V
GES
±20 V
Collector current DC (Tc = 80°C) I
C
600 A
Forward current DC (Tc = 80°C) I
F
600 A
Collector power dissipation
(Tc = 25°C)
P
C
5400 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
-40 to 125 °C
Isolation voltage V
isol
2500
(AC 1 minute)
Vrms
Terminal ¾ 3 N·m
Screw torque
Mounting ¾ 3 N·m
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-109F1A
Weight: 465 g (typ.)
G
E E
C
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.