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RN1102(TE85L,F)Datasheet PDF
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RN1101∼RN1106
2014-03-01
1
Type No. R1 (kΩ) R2 (kΩ)
RN1101 4.7 4.7
RN1102 10 10
RN1103 22 22
RN1104 47 47
RN1105 2.2 47
RN1106 4.7 47
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101, RN1102, RN1103
RN1104, RN1105, RN1106
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2101 to RN2106
Equivalent Circuit and Bias Resister Values
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage
RN1101 to 1106
V
CEO
50 V
RN1101 to 1104 10
Emitter-base voltage
RN1105, 1106
V
EBO
5
V
Collector current I
C
100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 °C
Storage temperature range
RN1101 to 1106
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC ―
JEITA ―
TOSHIBA 2-2H1A
Weight: 2.4 mg (typ).
Unit: mm
Start of commercial production
1990-12
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