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TLP181(GR-TPR,F,T)Datasheet PDF
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TLP781/TLP781F
2008-01-17
1
1
2
3
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
TOSHIBA Photocoupler GaAs IRED & Photo−Transistor
TLP781, TLP781F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
The TOSHIBA TLP781 consists of a silicone photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
four lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV
RMS
(min)).
• TLP781 : 7.62mm pitch type DIP4
• TLP781F : 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000V
rms
(min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002
Approved no.8961
BS EN60950-1:2006
Approved no.8962
• SEMKO approved:EN60065:2002
Approved no.800514
EN60950-1:2001, EN60335-1:2002
Approved no.800517
• Option(D4)type
VDE approved : DIN EN60747-5-2
Certificate No. 40021173
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
• Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance 6.5mm(min) 8.0mm(min)
Clearance 6.5mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)
Unit in mm
TOSHIBA
Weight: 0.25g (typ.)
Unit in mm
TOSHIBA
Weight: 0.25g (typ.)
Pin Configurations
(top view)
TLP781
TLP781F
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