| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Case/Package | DIP-4 |
| Rise/Fall Time | 7µs, 11µs |
| Number of Channels | 1 Channel |
| Forward Voltage | 1.2 V |
| Input Current | 60 mA |
| Power Dissipation | 200 mW |
| Rise Time | 7 µs |
| Isolation Voltage | 5000 Vrms |
| Forward Current | 60 mA |
| Output Voltage (Max) | 80 V |
| Maximum Forward Voltage (Max) | 1.4 V |
| Forward Current (Max) | 60 mA |
| Fall Time | 11 µs |
| Fall Time (Max) | 18 µs |
| Fall Time (Max) | 18 µs |
| Operating Temperature (Max) | 110 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 4.58 mm |
| Operating Temperature | -55℃ ~ 110℃ |
Description
●The EL814 series of devices each consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a phototransistor detector.
●They are packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.
●Features:
●• AC input response
●• Current transfer ratio
●(CTR: Min. 20% at IF=±1mA ,VCE=5V)
●• High isolation voltage between input
● and output (Viso=5000 V rms )
●• Wide Operating temperature range -55~110ºC
●• High collector-emitter voltage VCEO=80V
●• Compact dual-in-line package
Everlight Electronics
13 Pages / 0.72 MByte
Everlight Electronics
13 Pages / 1.47 MByte
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