| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 150 W |
| Breakdown Voltage (Collector to Emitter) | 230 V |
| Continuous Collector Current | 15A |
| DC Current Gain (hFE) | 160 |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
● Collector to emitter voltage (Vce) is 230V
● Collector to base voltage of 230V
● Collector current (Ic) is 15A
● Power dissipation (pd) is 150W
● Junction temperature of 150°C
● Current gain of 35 at 7A collector current
● Collector to emitter saturation voltage of 3V
● Collector to emitter breakdown voltage of 230V
Toshiba
5 Pages / 0.18 MByte
Toshiba
1 Pages / 0.08 MByte
Toshiba
8 Pages / 0.4 MByte
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