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TTC5200Datasheet PDF
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TTC5200
2009-07-13
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
TTC5200
○ Power Amplifier Applications
• High collector voltage: V
CEO
= 230 V (min)
• Complementary to TTA1943
• Recommended for 100-W high-fidelity audio frequency amplifier output
stage.
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
230 V
Collector-emitter voltage V
CEO
230 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
15 A
Base current I
B
1.5 A
Collector power dissipation (Tc=25°C) P
C
150 W
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note 1 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-21F1A
Weight: 9.75 g (typ)
1.BASE
2.COLLECTOR(HEAT SINK)
3.EMITTER
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