| TYPE | DESCRIPTION |
|---|
| Number of Pins | 11 Pin |
| Case/Package | Module |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 2100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2.1 kW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 152 mm |
| Size-Width | 62 mm |
| Size-Height | 17 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
IGBT Module PT Half Bridge 1200V 650A 2100W Chassis Mount Module
IXYS Semiconductor
6 Pages / 0.16 MByte
IXYS Semiconductor
Trans IGBT Module N-CH 1200V 650A 2100000mW 10Pin
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