The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.
●Features
●• >100kHz Operation At 390V, 20A
●• 200kHz Operation At 390V, 12A
●• 600V Switching SOA Capability
●• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
●• Low Conduction Loss
●• Temperature Compensating SABER™ Model
Fairchild
9 Pages / 0.13 MByte
Fairchild
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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