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2N2102
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2N2102 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:BJTs
Case Package:TO-5-3
Description:Trans GP BJT NPN 65V 1A 3Pin TO-39 Bag
Documentation:2N2102 Datasheet (4 Pages)
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2N2102 Datasheet PDF (4 Pages)
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2N2102 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)120 V
Current Rating1.00 A
Case/PackageTO-5-3
PolarityNPN
Power Dissipation1000 mW
Breakdown Voltage (Collector to Base)120 V (min)
Breakdown Voltage (Collector to Emitter)65 V
hFE Min40 @150mA, 10V
Input Power (Max)1 W
DC Current Gain (hFE)40
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)1000 mW
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2N2102 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
MaterialSilicon
Size-Length9.4 mm
Size-Width9.4 mm
Size-Height6.6 mm
Operating Temperature175℃ (TJ)
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2N2102 Documents

2N2102 Datasheet
ST Microelectronics
4 Pages / 0.04 MByte
2N2102 Drawing Diagrams
ST Microelectronics
2 Pages / 0.54 MByte
2N2102 Other References
ST Microelectronics
1 Pages / 0.16 MByte
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